IC62LV2568L Datasheet, PDF (3/10 Pages) Integrated Circuit Solution Inc – 256K x 8 LOW POWER AND LOW Vcc CMOS STATIC RAM

IC62LV2568L
IC62LV2568LL
TRUTH TABLE
Mode
WE
CE1 CE2
OE
Not Selected
X
H
X
X
(Power-down)
X
X
L
X
Output Disabled
H
L
H
H
Read
H
L
H
L
Write
L
L
H
X
I/O Operation
High-Z
High-Z
High-Z
DOUT
DIN
Vcc Current
ISB, ISB
ISB, ISB
ICC
ICC
ICC
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
VTERM
VCC
TBIAS
TSTG
PT
Parameter
Terminal Voltage with Respect to GND
Vcc related to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
Value
Unit
–0.5 to Vcc + 0.5 V
–0.3 to +4.0
V
–40 to +85
°C
–65 to +150
°C
0.7
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE⁽¹⁾
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
Unit
6
p.
8
p.
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
VOH
VOL
VIH
VIL⁽¹⁾
ILI
ILO
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage⁽¹⁾
Input Leakage
Output Leakage
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC
Notes:
1. VIL = –2.0V for pulse width less than 10 ns.
Min.
Max.
Unit
2.2
—
V
—
0.4
V
2.2 VCC + 0.3 V
–0.3
0.4
V
–1
1
µA
–1
1
µA
Integrated Circuit Solution Inc.
3
LPSR001-0A 05/01/2001