IC42S32800 Datasheet, PDF (20/62 Pages) Integrated Circuit Solution Inc – 2M x 32 Bit x 4 Banks (256-MBIT) SDRAM

IC42S32800
IC42S32800L
ABSOLUTE MAXIMUM RATINGS⁽¹⁾
Symbol
Parameters
Rating
Unit
VDD
VDDQ
VI
VO
IO
PD
TOPT
TSTG
Supply Voltage (with respect to VSS)
–0.5 to +4.6
V
Supply Voltage for Output (with respect to VSSQ) –0.5 to +4.6
V
Input Voltage (with respect to VSS)
–0.5 to VDD+0.5
V
Output Voltage (with respect to VSSQ)
–1.0 to VDDQ+0.5
V
Short circuit output current
50
mA
Power Dissipation (TA = 25 °C)
1
W
Operating Temperature
0 to +70
°C
Storage Temperature
–65 to +150
°C
Notes:
1. Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant
to be operated under conditions outside the limits described in the operational section of this specification. Exposure to Absolute
Maximum Rating conditions for extended periods may affect device reliability.
DC RECOMMENDED OPERATING CONDITIONS
(At TA = 0 to +70°C unless otherwise noted)
Symbol
Parameter
VDD
VDDQ
VIH
VIL
Supply Voltage
Supply Voltage for DQ
High Level Input Voltage (all Inputs)
Low Level Input Voltage (all Inputs)
Notes:
1. All voltages are referenced to VSS =0V
2. VIH(max) for pulse width with ≤ 3ns of duration
3. VIL(min) for pulse width with ≤ 3ns of duration
Min.
3.0
3.0
2.0
-1.2
Typ.
3.3
3.3
—
—
Max.
3.6
3.6
VDD + 1.2
+0.8
Unit
V
V
V
V
CAPACITANCE CHARACTERISTICS
(At TA = 0 ~ 70°C, VDD = VDDQ = 3.3 ± 0.3V, VSS = VSSQ = 0V , unless otherwise noted)
Symbol
CIN
CCLK
CI/O
Parameter
Input Capacitance, address & control pin
Input Capacitance, CLK pin
Data Input/Output Capacitance
Min.
Max.
Unit
1.5
3.0
pF
1.5
3.0
pF
3.0
5.5
pF
20
Integrated Circuit Solution Inc.
DR046-0B 12/21/2004