IC61SF25632T Datasheet, PDF (2/19 Pages) Integrated Circuit Solution Inc – 8Mb SyncBurst Flow through SRAM

IC61SF25632T/D IC61SF25636T/D
IC61SF51218T/D
256K x 32, 256K x 36, 512K x 18
8Mb SYNCBURST Flow throughSRAMs
FEATURES
• Flowthrough Mode operation.
• User-selectable Output Drive Strength with XQ Mode.
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and control
• Pentium™ or linear burst sequence control using
MODE input
• Common data inputs and data outputs
• JEDEC 100-Pin TQFP and 119-pin PBGA package
• Single +3.3V, +10%, –5% core power supply
• Power-down snooze mode
• 2.5V or 3.3V I/O Supply
• Snooze MODE for reduced-power standby
• T version (three chip selects)
• D version (two chip selects)
FAST ACCESS TIME
Symbol -6.5 -7.5 -8.5 -9.5
Flow
tKQ
6.5 7.5 8.5 9.5
Through tKC
7.5 8.5 10 11
2-1-1-1 ICC1
270 260 240 230
Units
ns
ns
mA
DESCRIPTION
ICSI's 8Mb SyncBurst Flowthrough SRAMs integrate a 512k x
18, 256k x 32, or 256k x 36 SRAM core with advanced
synchronous peripheral circuitry and a 2-bit burst counter.
Applications
The ICSI SyncBurst Flowthrough SRAM family employs high-
speed ,low-power CMOS designs that are fabricated using an
advanced CMOS process to provide Level 2 Cache applica-
tions supporting Pentium and PowerPC microprocessors
originally, the device now finds application ranging from DSP
main store to networking chip set support.
Controls
All synchronous inputs pass through registers controlled by a
positive-edge-triggered single clock input.Bursts can be initiated
with either ADSP (Address Status Processor) or ADSC (Address
Status Cache Controller) input pins. Subsequent burst ad-
dresses can be generated internally and controlled by the ADV
(burst address advance) input pin. The mode pin is used to select
the burst sequence order, Linear burst is achieved when this pin
is tied LOW. Interleave burst is achieved when this pin is tied
HIGH or left floating.
Byte Write and Global Write
Write cycles are internally self-timed and are initiated by the rising
edge of the clock input. Write cycles can be from one to four bytes
wide as controlled by the write control inputs.Separate byte
enables allow individual bytes to be written. Byte write operation
is performed by using byte write enable (BWE).input combined
with one or more individualbyte write signals (BWx). In addition,
Global Write (GW) is available for writing all bytes at one time,
regardless of the byte write controls.
IOL/IOH Drive strength Options
The XQ pin allows selection between high drive strength (XQ
low) for multi-drop bus applications and normal drive strength
(XQ floating or high) point-to-point applications. See the Output
Driver Characteristics chart for details.
Snooze Mode
Low power (Snooze mode) is attained through the assertion
(High) of the ZZ signal, or by stopping the clock (CK). Memory
data is retained during Snooze mode.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
SSR020-0A 9/03/2002