IC41C82002S Datasheet, PDF (2/19 Pages) Integrated Circuit Solution Inc – 2Mx8 bit Dynamic RAM with EDO Page Mode

IC41C82002S
IC41LV82002S
2M x 8 (16-MBIT) DYNAMIC RAM
WITH EDO PAGE MODE
FEATURES
• Extended Data-Out (EDO) Page Mode
access cycle
• TTL compatible inputs and outputs
• Refresh Interval:
-- 2,048 cycles/32 ms
• Refresh Mode: RAS-Only,
CAS-before-RAS (CBR), and Hidden
• Self Refresh Mode 2,048 cycles/64ms
• JEDEC standard pinout
• Single power supply:
5V±10% or 3.3V ± 10%
• Byte Write and Byte Read operation via
CAS
PRODUCT SERIES OVERVIEW
Part No.
Refresh
Voltage
IC41C82002S
2K
5V ± 10%
IC41LV82002S
2K
3.3V ± 10%
PIN CONFIGURATION
28 Pin SOJ, TSOP-2
DESCRIPTION
The ICSI 82002S Series is a 2,097,152 x 8-bit high-perfor-
mance CMOS Dynamic Random Access Memory. The EDO
Page Mode allows 2,048 random accesses within a single row
with access cycle time as short as 20 ns per 8-bit word.
These features make the 82002S Series ideally suited for high-
bandwidth graphics, digital signal processing, high-performance
computing systems, and peripheral applications.
The 82002S Series is packaged in a 28-pin 300mil SOJ and a
28 pin 400mil TSOP-2
KEY TIMING PARAMETERS
Parameter
RAS Access Time (tRAC)
CAS Access Time (tCAC)
Column Address Access Time (tAA)
EDO Page Mode Cycle Time (tPC)
Read/Write Cycle Time (tRC)
-50 -60 Unit
50 60 ns
13 15 ns
25 30 ns
20 25 ns
84 104 ns
PIN DESCRIPTIONS
A0-A10
I/O0-7
WE
OE
RAS
CAS
Vcc
GND
NC
Address Inputs
Data Inputs/Outputs
Write Enable
Output Enable
Row Address Strobe
Column Address Strobe
Power
Ground
No Connection
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
2
Integrated Circuit Solution Inc.
DR022-0A 08/20/2001