IS61LV12816 Datasheet, PDF (1/11 Pages) Integrated Circuit Solution Inc – 128K x 16 HIGH-SPEED CMOS STATIC RAM

IS61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V + 10%power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The 1+51 IS61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using 1+51's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV12816 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TF-
BGA.
A0-A16
DECODER
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
CE
OE
WE
CONTROL
CIRCUIT
UB
LB
128K x 16
MEMORY ARRAY
COLUMN I/O
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.
Integrated Circuit Solution, Inc.
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