IC-HG_11 Datasheet, PDF (6/21 Pages) IC-Haus GmbH – 3 A LASER SWITCH

iC-HG
3 A LASER SWITCH
preliminary
Rev A2, Page 6/21
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.0...5.5 V, AGND1. . . 6 = GND, Tj = -25...125 °C unless otherwise stated
Item Symbol Parameter
No.
Conditions
Unit
Min. Typ. Max.
Total Device (x = 1. . . 6)
001 VDD
Permissible Supply Voltage
3
5.5
V
002 I(VDD) Supply Current in VDD
CW operation
10
mA
003 I(VDD) Supply Current in VDD
pulsed operation, f(ENx) = 200 MHz
700 mA
004 V(LDKx) Permissible Voltage at LDKx
-0.3
12
V
005 V(NER) Permissible Voltage at NER
-0.3
5.5
V
006 Vc()hi
Clamp Voltage hi at LDKx
I(LDK) = 10 mA
12.1
18
V
007 Vc(NER) Clamp Voltage hi at NER
I(NER) = 1 mA
7
15
18
V
008 Vc(CIx)hi Clamp Voltage hi at CIx
Vc(CIx) = V(CIx) − VDD;
I(CI) = 10 mA, other pins open
0.3
1.6
V
009 Vc()hi
Clamp Voltage hi at ENx, ELVDS Vc() = V() − VDD;
I() = 1 mA, other pins open
0.8
3
V
010 Vc()lo
Clamp Voltage lo at VDD, LDKx, I() = -10 mA, other pins open
CIx, ENx, AGNDx, ELVDS, NER
-1.6
-0.3
V
Laser Control LDK1. . . 6, CI1. . . 6 (x = 1. . . 6)
101 Icw(LDKx) Permissible CW Current in LDKx
(per channel)
500 mA
102 Vs(LDKx) Saturation Voltage at LDKx
I(LDKx) = 450 mA,
V(CIx) = V(CIx)@I(LDKx) = 500 mA
1.5
V
103 I0(LDKx) Leakage Current in LDKx
ENx = lo, V(LDKx) = 12 V
100 µA
104 tr()
LDKx Current Rise Time Fast
Iop(LDKx) = 500 mA, I(LDKx): 10% → 90% Iop,
V(ELVDS) = 0 V or VDD
1
ns
105 tf()
LDKx Current Fall Time Fast
Iop(LDKx) = 500 mA, I(LDKx): 90% → 10% Iop,
V(ELVDS) = 0 V or VDD
1
ns
106 tr()
LDKx Current Rise Time Slow Iop(LDKx) = 500 mA, I(LDKx): 10% → 90% Iop, 5
10
40
ns
V(ELVDS) = 30% VDD or 70% VDD, VDD = 5 V
107 tf()
LDKx Current Fall Time Slow Iop(LDKx) = 500 mA, I(LDKx): 90% → 10% Iop, 5
10
40
ns
V(ELVDS) = 30% VDD or 70% VDD, VDD = 5 V
108 tr()
LDKx Current Rise Time Slow Iop(LDKx) = 500 mA, I(LDKx): 10% → 90% Iop, 10
30
90
ns
V(ELVDS) = 30% VDD or 70% VDD,
VDD = 3.3 V
109 tf()
LDKx Current Fall Time Slow Iop(LDKx) = 500 mA, I(LDKx): 90% → 10% Iop, 10
30
90
ns
V(ELVDS) = 30% VDD or 70% VDD,
VDD = 3.3 V
110 tp()
Propagation Delay Fast
V(ENx) → I(LDKx)
V(ELVDS) = 0 V or VDD, Differential LVDS Rise 3
and Fall Time < 0.5 ns
5
14
ns
111 CR()
Current Matching all Channels
0.9
1.1
112 V(CIx)
Permissible Voltage at CIx
-0.3
VDD
V
113 Vt(CIx) Threshold Voltage at CIx
I(LDKx) < 5 mA
0.5
1.2
V
114 V(CIx)
Operating Voltage at CIx
I(LDKx) = 500 mA, V(LDKx) > 1.8 V
2
2.9
V
115 Ipd(CIx) Pull-Down Current at CIx
V(CIx) = 0.5. . . 5.5 V
1
2.5
5
µA
116 C(CIx) Capacity at CIx
V(CIx) = 2 V
500 635 760 pF
117 Vc(LDKx) Clamp Voltage at LDKx
I(LDKx) = 100 mA, tclamp < 1 ms,
tclamp/T < 1:100
12.5
20
V
Input EN1. . . 6 (x = 1. . . 6)
201 Vt(TTL)hi Input Threshold Voltage hi
V(ELVDS) < 35% VDD, TTL
2
V
202 Vt(TTL)lo Input Threshold Voltage lo
V(ELVDS) < 35% VDD, TTL
0.8
V
203 Vhys(TTL) Hysteresis
Vhys() = Vt()hi − Vt()lo;
V(ELVDS) < 35% VDD, TTL
50
mV
204 I(ENx)
Pulldown Current
V(ELVDS) < 35% VDD, V() = 0.8 V. . . VDD, TTL 4
30
80
µA
205 R(ENx) Differential Input Impedance at V(ELVDS) > 65% VDD, V(ENx) < VDD − 1.4 V, 14
ENx
LVDS
28
kΩ
206 Vdiff
Differential Voltage
Vdiff = |V(EN1,3,5) − V(EN2,4,6)|;
200
mV
V(ELVDS) > 65% VDD, LVDS