IC-LA Datasheet, PDF (5/8 Pages) IC-Haus GmbH – 64X1 LINEAR IMAGE SENSOR

iC-LA
64X1 LINEAR IMAGE SENSOR
Rev A3, Page 5/8
ELECTRICAL and OPTICAL CHARACTERISTICS
Operating Conditions: VDDA(1,2) = VDDD = 5 V ±5%, GNDA(1,2) = GNDD = 0 V, Tj = -25..90 °C, unless otherwise noted
Item Symbol Parameter
Nr.
Conditions
Tj Fig.
°C
Min.
Typ.
Max.
Total Device
1 VDDA Permissible Analog Supply
Voltage
4.75
5.25
2 VDDD Permissible Digital Supply
Voltage
4.75
5.25
3 VCMIN Permissible Offset Voltage for
Integration Capacitor
0
1
4 I(VDDA) Supply Current in VDDA
5 I(VDDD) Supply Current in VDDD
f(CLK) # 5 MHz
15
20
17
20
6 I(VCMIN) Input Current in VCMIN
10
50
7 Vc()hi
Clamp Voltage hi at AOUT,
Vc()hi = V(VDDA) - V();
VCMIN, CLK, DNU, DIN, DOUT I() = 1 mA, other pins open
0.3
1.5
8 Vc()lo
Clamp Voltage lo at AOUT,
Vc()lo = V(GNDA) - V();
VCMIN, CLK, DNU, DIN, DOUT I() = -1 mA, other pins open
-1.5
-0.3
Analog Output AOUT
101 CL()
Permissible Load Capacitance
50
102 Vs()lo Saturation Voltage lo
I() = 1 mA
300
400
103 Vs()hi Saturation Voltage hi
Vs()hi = VDDA - V(); I() = -1 mA
400
104 K1
Sensitivity
(naked chip)
λ = 880 nm
λ = 660 nm
λ = 550 nm
λ = 470 nm
3.48 4.19 4.74
6.46 7.78 8.79
3.69 4.44 5.02
3.20 3.85 4.35
105 KX
Sensitivity
(multi-chip BMST assembly)
λ = 880 nm
λ = 660 nm
λ = 550 nm
λ = 470 nm
3.35 4.19 5.03
6.22 7.78 9.34
3.55 4.44 5.33
3.08 3.85 4.62
106 ∆K1
Sensitivity Nonuniformity
see note (1)
-7.5
7.5
107 V0()
Dark Voltage
referenced to VCMIN,
integration time is 200 µs
20
100
108 ∆V0()
Dark Voltage Deviation with
pixel in track mode
∆V0() = V0()t1 - V0()t2,
∆t = t2 - t1 = 200 µs
-70
70
109 ∆V()
Output Voltage Deviation with
pixel in hold mode
∆V() = V()t1 - V()t2,
∆t = t2 - t1 = 200 µs
-2
2
110 ∆V()
Output Voltage Linearity
(low level signal)
V() = V0()...0.75 V; see note (2)
-7.5
7.5
111 ∆V()
Output Voltage Linearity
V() = 0.75 V...Vs()hi; see note (3)
-1
1
(high level signal)
112 V0()rms Output Voltage Noise (RMS)
V() = 0...4 V, f(CLK) = 5 MHz
2.5
113 VT()
Temperature Voltage
V(CLK) = V(DIN) = 0 V
25
2.9
3.1
3.25
114 ∆VT() Temperature Voltage Coefficient V(CLK) = V(DIN) = 0 V
-10
-9.5
-9
Photosensor Characteristics
201 A()
Radiant Sensitive Area
183 µm x 200 µm per pixel
0.037
202 S(λ)max Spectral Sensitivity
λ = 680 nm
0.335
203 λar
Spectral Application Range
S(λar) = 0.25 x S(λ)max
400
950
Unit
V
V
V
mA
mA
µA
V
V
pF
mV
mV
V/pWs
V/pWs
V/pWs
V/pWs
V/pWs
V/pWs
V/pWs
V/pWs
%
mV
mV
mV
mV
%
mV
V
mV/°C
mm²
A/W
mm²