ICE4N65D Datasheet, PDF (4/9 Pages) Icemos Technology – Enhancement Mode MOSFET

Output Characteristics
12
V_GS=10 to 7V
6V
10
8
6
5V
4
2
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
On Resistance vs Drain Current
V_GS = 10V
2
4
6
8
10
12
I_D - Drain current (A)
Gate Charge
10
9
8
7
V_DS = 480V
6
I_D = 4A
5
4
3
2
1
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
SP-4N65D-000-0
11/22/2013
Preliminary Data Sheet
ICE4N65D
Transfer Characteristics
12
10
8
6
4
2
T_J = 150˚C
25˚C
0
0
2
4
6
8
10
V_GS - Gate-to-Source (V)
On Resistance vs Junction Temperature
4.0
3.5
3.0
V_GS = 10V
I_D = 2A
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
Gate Threshold Voltage vs Junction Temperature
1.4
1.3
1.2
1.1
1.0
I_D = 250μA
0.9
0.8
0.7
0.6
0.5
0.4
-50
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (˚C)
4