ICE4N65D Datasheet, PDF (1/9 Pages) Icemos Technology – Enhancement Mode MOSFET

Preliminary Data Sheet
ICE4N65D
ICE4N65D N-Channel
Enhancement Mode MOSFET
Features
• Low r_DS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Increased transconductance performance
• Optimized design for high performance power systems
HALOGEN
FREE
I_D
V_(BR)DSS
r_DS(on)
Q_g
Product Summary
T_A=25^oC
I_D=250uA
V_GS=10V
V_DS=480V
4A
650V
0.85Ω
21nC
D
Max
Min
Typ
Typ
G
S
T0252
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Standard Metal
Heatsink
1=Gate, 2=Drain,
3=Source.
Maximum ratings ^b , at T_j=25^oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current ^c
Pulsed drain current
Avalanche energy, single pulse
I_D
I_{D, pulse}
E _AS
T_c=25^oC
T_c=100^oC
T_c=25^oC
I_D=2A
Avalanche current, repetitive
I _AR
limited by T_jmax
MOSFET dv/dt ruggedness
dv/dt
V_DS=480V, I_D=4A,
T_j=125^oC
Gate source voltage
Static
V_GS
AC (f>1Hz)
Power dissipation
P_tot
T_c=25^oC
Operating and storage temperature
T_j, T_stg
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
c Limited by Tjmax
Value
4
2.6
12
80
2
50
±20
±30
40
-55 to +150
Unit
A
A
A
mJ
A
V/ns
V
W
o_C
SP-4N65D-000-0
11/22/2013
1