ICE60N150FP Datasheet, PDF (2/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE60N150FP
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case ^a
R_thJC
Thermal resistance, junction-
ambient ^a
R_thJA
Soldering temperature, wave
soldering only allowed at leads
T _sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
-
- 3.5
o_C/W
-
- 72
-
- 260 ^oC
Electrical characteristics ^b , at T_j=25^oC, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
Gate threshold voltage
V_(BR)DSS
V_GS(th)
Zero gate voltage drain current I_DSS
Gate source leakage current IGSS
Drain-source
on-state resistance
R_{DS (on)}
V_GS=0 V, I_D=250µA
V_DS=V_GS, I_D=250µA
V_DS=650V, V_GS=0V,
T_j=25^oC
V_DS=650V, V_GS=0V,
T_j=150^oC
V_GS=±20 V, V_DS=0V
V_GS=10V, I_D=13A,
T_j=25^oC
V_GS=10V, I_D=13A,
T_j=150^oC
650 675 -
V
2.5
3 3.5
-
0.1 1
µA
-
- 100
-
- 100 nA
- 0.13 0.15
Ω
- 0.40 -
Gate resistance
R_G
f=1 MHZ, open drain
-
4
-
Ω
Dynamic characteristics
Input capacitance
C_iss
Output capacitance
C_oss
Reverse transfer capacitance C_rss
Input capacitance
C_iss
Output capacitance
C_oss
Transconductance
g_fs
Turn-on delay time
t_d(on)
Rise time
t_r
Turn-off delay time
t_d(off)
Fall time
t_f
V_GS=0 V, V_DS=25 V,
f=1 MHz
- 2750 -
- 980 -
-
25 -
pF
V_GS=0 V, V_DS=100 V,
f=1 MHz
- 2740 -
-
87 -
V_DS>2*I_D*R_DS, I_D=13A
-
25 -
S
-
10 -
V_DS=380V, V_GS=10V,
-
5
-
I_D=25A,
R_G=4Ω (External)
ns
-
67 -
-
4.5 -
SP-60N150FP-000-2a
06/05/2013
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