ICE60N150FP Datasheet, PDF (1/9 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET

Preliminary Data Sheet
ICE60N150FP
ICE60N150FP N-Channel
Enhancement Mode MOSFET
I_D
V_(BR)DSS
Product Summary
T_A=25^oC
I_D=250uA
25A
650V
Max
Min
r_DS(on) V_GS=10V 0.13Ω
Typ
Features
• Low r_DS(on)
• Ultra Low Gate Charge
HALOGEN
FREE
Q_g
V_DS=480V 85nC
Typ
D
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
G
• Optimized design for hard switching SMPS topologies
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
Maximum ratings ^b , at T_j=25^oC, unless otherwise specified
T0220 Full-PAK
Isolated (T0-220)
1=Gate, 2=Drain,
3=Source
Parameter
Symbol
Conditions
Value
Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
I_D
I_{D, pulse}
E _AS
T_c=25^oC
T_c=25^oC
I_D=6A
25
A
75
A
690
mJ
Avalanche current, repetitive
I _AR
limited by T_jmax
6
A
MOSFET dv/dt ruggedness
dv/dt
V_DS=480V, I_D=25A,
T_j=125^oC
50.0
V/ns
Gate source voltage
Static
V_GS
AC (f>1Hz)
±20
V
±30
Power dissipation
Operating and storage temperature
Mounting torque
P_tot
T_j, T_stg
T_c=25^oC
M 2.5 screws
35
-55 to +150
50
W
o_C
Ncm
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
SP-60N150FP-000-2a
06/05/2013
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