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| ICE22N60W Datasheet, PDF (2/8 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET | |||
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Preliminary Data Sheet
ICE22N60W
Parameter
Symbol
Conditions
Thermal characteristics
Thermal resistance, junction-
case a
RthJC
Thermal resistance, junction-
ambient a
RthJA
Soldering temperature, wave
soldering only allowed at leads
T sold
leaded
1.6mm (0.063in.) from
case for 10 s
Values
Unit
Min Typ Max
-
- 0.6
oC/W
-
- 62
-
- 260 oC
Electrical characteristics b , at Tj=25oC, unless otherwise specified
Static characteristics
Drain-source breakdown
voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
Zero gate voltage drain current IDSS
Gate source leakage current IGSS
Drain-source
on-state resistance
RDS (on)
VGS=0 V, ID=250µA
VDS=VGS, ID=250µA
VDS=600V, VGS=0V,
Tj=25oC
VDS=600V, VGS=0V,
Tj=150oC
VGS=±20 V, VDS=0V
VGS=10V, ID=11A,
Tj=25oC
VGS=10V, ID=11A,
Tj=150oC
600 650 -
V
2.5
3 3.5
-
0.1 1
µA
-
- 100
-
- 100 nA
- 0.14 0.16
â¦
-
0.4 -
Gate resistance
RG
f=1 MHZ, open drain
-
4
-
â¦
Dynamic characteristics
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Output capacitance
Coss
Transconductance
gfs
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
VGS=0 V, VDS=25 V,
f=1 MHz
- 2650 -
- 780 -
-
50 -
pF
VGS=0 V, VDS=100 V,
f=1 MHz
-
80 -
VDS>2*ID*RDS, ID=11A
-
20 -
S
-
10 -
VDS=380V, VGS=10V,
-
5
-
ID=22A,
RG=4⦠(External)
ns
-
67 -
-
4.5 -
SP-22N60W-000-3
05/15/2013
2
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