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ICE22N60W Datasheet, PDF (1/8 Pages) Icemos Technology – N-Channel Enhancement Mode MOSFET
Preliminary Data Sheet
ICE22N60W
ICE22N60W N-Channel
Enhancement Mode MOSFET
Features
• Low rDS(on)
• Ultra Low Gate Charge
• High dv/dt capability
• High Unclamped Inductive Switching (UIS) capability
• High peak current capability
• Optimized design for hard switching SMPS topologies
HALOGEN
FREE
Product Summary
ID
TA=25oC 22A
BVDSS @Tjmax ID=250uA 650V
rDS(on)
VGS=10V 0.14Ω
Qg
VDS=480V 82nC
Max
Min
Typ
Typ
D
G
S
ICEMOS AND ITS SISTER COMPANY 3D SEMI OWN THE FUNDAMENTAL PATENTS
FOR SUPERJUNCTION MOSFETS. THE MAJORITY OF THESE PATENTS HAVE 17 to 20
YEARS OF REMAINING LIFE. THIS PORTFOLIO HAS GRANTED PATENTS ISSUED IN
USA, CHINA, KOREA, JAPAN, TAIWAN & EUROPE.
TO247
1:G, 2:D,
3:S, 4:D,
(TO-247)
Maximum ratings b , at Tj=25oC, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
ID
ID, pulse
E AS
Tc=25oC
Tc=25oC
ID=11.5A
Avalanche current, repetitive
I AR
limited by Tjmax
MOSFET dv/dt ruggedness
dv/dt
VDS=480V, ID=22A,
Tj=125oC
Gate source voltage
static
VGS
AC (f>1Hz)
Power dissipation
Ptot
Tc=25oC
Operating and storage temperature
Tj, Tstg
Mounting torque
M 3 & 3.5 screws
a When mounted on 1inch square 2oz copper clad FR-4
b Preliminary Data Sheet – Specifications subject to change
Value
22
82
690
10
50.0
±20
±30
208
-55 to +150
60
Unit
A
A
mJ
A
V/ns
V
W
oC
Ncm
SP-22N60W-000-3
05/15/2013
1