HYMD264G726BL8-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Registered DDR SDRAM DIMM

HYMD264G726B(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs
changing twice per clock cycle ; address and
2270 2135 2135 2000 mA
control inputs changing once per clock cycle
Operating Current
IDD1
One bank; Active - Read - Precharge; Burst
Length =2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per ^{2270 2135 2135 2000 mA}
clock cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK= tCK(min)
830
mA
Idle Standby Current
IDD2F
/CS=High, All banks idle; tCK=tCK(min); CKE=
High; address and control inputs changing
once per clock cycle. VIN=VREF for DQ, DQS
1550
1460
1460
1370
mA
and DM
Active Power Down
Standby Current
One bank active ; Power down mode;
IDD3P _{CKE=Low, tCK=tCK(min)}
920
mA
Active Standby Current
IDD3N
/CS=HIGH; CKE=HIGH; One bank; Active-
Precharge; tRC=tRAS(max); tCK=tCK(min);
DQ, DM and DQS inputs changing twice per
clock cycle; Address and other control inputs
changing once per clock cycle
1730 1640 1640 1550 mA
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing
once per clock cycle; tCK=tCK(min);
IOUT=0mA
2720 2495 2495 2360
Operating Current
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing
mA
IDD4W _{once per clock cycle; tCK=tCK(min); DQ, DM,} 2810 2675 2675 2540
and DQS inputs changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at
100Mhz, 10*tCK for DDR266A & DDR266B at
133Mhz; distributed refresh
2510
2375
2375
2240
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK =tCK(min)
Normal
Low Power
404
377
mA
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with BL=4 Refer to the
following page for detailed test condition
3620 3485 3485 3350 mA
Rev. 0.1/Oct. 02
8