HYMD132G725B8M-M Datasheet, PDF (8/17 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM

HYMD132G725B(L)8M-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS=0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
1820 1730 1730 1730
mA
changing once per clock cycle
Operating Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per
2000 1910 1910 1730
mA
clock cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK (min)
920
mA
Idle Standby Current
IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQS and DM
1280
mA
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
1010
mA
/CS=HIGH; CKE=HIGH; One bank;
Active-Precharge; tRC= tRAS(max);
Active Standby Current
IDD3N tCK=tCK(min); DQ, DM and DQS inputs changing
1370
mA
twice per clock cycle; Address and other control
inputs changing once per clock cycle
Operating Current
IDD4R
Burst=2; Reads; Continuous burst; One bank
active; Address and control inputs changing once 2720 2720 2720 2360
per clock cycle; tCK=tCK(min); IOUT=0mA
Operating Current
Burst=2; Writes; Continuous burst; One bank
IDD4W
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
2720
2720
2720
2360
mA
inputs changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
2060 2060 2060 1970
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal
Low Power
386
368
mA
mA
Operating Current - Four
Bank Operation
IDD7
Four bank interleaving with BL=4, Refer to the
following page for detailed testcondition
3350 3350 3350 2990 mA
Rev. 0.3/May. 02
8