HYMD132G725B4M-M Datasheet, PDF (8/16 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM

HYMD132G725B(L)4M-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS=0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
2270 2090 2090 2090 mA
Operating Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock ^{2630 2450 2450 2090 mA}
cycle
Precharge Power Down
Standby Current
IDD2P
All banks idle; Power down mode; CKE=Low,
tCK=tCK(min)
920
mA
Idle Standby Current
IDD2F
/CS=High, All banks idle; tCK=tCK(min);
CKE=High; address and control inputs changing
once per clock cycle.
VIN=VREF for DQ, DQS, and DM
1280
mA
Active Power Down
Standby Current
One bank active; Power down mode; CKE=Low,
IDD3P _tCK=tCK(min)
1010
mA
/CS=HIGH; CKE=HIGH; One bank;
Active-Precharge; tRC=tRAS(max); tCK=tCK(MIN);
Active Standby Current IDD3N DQ, DM and DQS inputs changing twice per clock
1370
mA
cycle; Address and other control inputs changing
once per clock cycle
Operating Current
Burst=2; Reads; Continuous burst; One bank
IDD4R active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); IOUT=0mA
4070 4070 4070 3350
Operating Current
IDD4W
Burst=2; Writes; Continuous burst; One bank
active; Address and control inputs changing once
per clock cycle; tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle
4070 4070 4070 3350 mA
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
3050 3050 3050 2870
Self Refresh Current
IDD6
CKE=< 0.2V; External clock on;
tCK=tCK(min)
Normal
Low Power
386
mA
368
mA
Operating Current - Four
Bank Operation
Four bank interleaving with BL=4, Refer to the
IDD7 _{following page for detailed test condition}
5330 5330 5330 4610 mA
Rev. 0.4/Jul. 02
8