HYMD116725B8-M Datasheet, PDF (8/17 Pages) Hynix Semiconductor – Unbuffered DDR SDRAM DIMM

HYMD116725B(L)8-M/K/H/L
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS=0V)
Parameter Symbol
Test Condition
Speed
Unit Note
-M -K -H -L
Operating Current
IDD0
One bank; Active - Precharge; tRC=tRC(min);
tCK=tCK(min); DQ,DM and DQS inputs changing
twice per clock cycle; address and control inputs
changing once per clock cycle
810 720 720 720 mA
Operating Current
IDD1
One bank; Active - Read - Precharge;
Burst Length= 2; tRC=tRC(min); tCK=tCK(min);
address and control inputs changing once per clock
cycle
990 900 900 720 mA
Precharge Power
Down Standby Current
IDD2P
All banks idle; Power down mode ; CKE=Low,
tCK=tCK(min)
135
mA
/CS=High, All banks idle; tCK=tCK(min);
Idle Standby Current
IDD2F
CKE=High; address and control inputs changing once
per clock cycle.
315
mA
VIN=VREF for DQ, DQS and DM
Active Power Down
Standby Current
IDD3P
One bank active; Power down mode; CKE=Low,
tCK=tCK(min)
180
mA
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge;
Active Standby Current
IDD3N
tRC=tRAS(max); tCK=tCK(min); DQ, DM and DQS
inputs changing twice per clock cycle; Address and
360
mA
other control inputs changing once per clock cycle
Operating Current
Burst=2; Reads; Continuous burst; One bank active;
IDD4R Address and control inputs changing once per clock 1710 1710 1710 1350 mA
cycle; tCK=tCK(min); IOUT=0mA
Operating Current
Burst=2; Writes; Continuous burst; One bank active;
IDD4W
Address and control inputs changing once per clock
cycle; tCK=tCK(min); DQ, DM and DQS inputs
1710 1710 1710 1350 mA
changing twice per clock cycle
Auto Refresh Current
IDD5
tRC=tRFC(min) - 8*tCK for DDR200 at 100Mhz,
10*tCK for DDR266A & DDR266B at 133Mhz;
distributed refresh
1350 1350 1350 1260 mA
Self Refresh Current
IDD6
CKE=<0.2V; External clock on;
tCK=tCK(min)
Normal
Low Power
18
mA
9
mA
Operating Current -
Four Bank Operation
IDD7
Four bank interleaving with BL=4, Refer to the
following page for detailed test condition
2340 2340 2340 1980 mA
Rev. 0.3/May. 02
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