HY57V281620HCT-6I Datasheet, PDF (8/11 Pages) Hynix Semiconductor – 4 Banks x 2M x 16bits Synchronous DRAM

HY57V281620HC(L/S)T-I
AC CHARACTERISTICS II
Parameter
Symbol
-6I
Min Max
-7I
Min Max
-KI
Min Max
-HI
Min Max
-8I
Min Max
-PI
Min Max
-SI
Min Max
Unit Note
RAS Cycle Time
Operation
Auto Refresh
tRC
tRRC
60
-
60
-
60
-
65
-
68
-
70
-
70
-
ns
60
-
65
-
65
-
65
-
68
-
70
-
70
-
ns
RAS to CAS Delay
tRCD
18
-
20
-
15
-
20
-
20
-
20
-
20
-
ns
RAS Active Time
tRAS
42 100K 45 100K 45 100K 45 100K 48 100K 50 100K 50 100K ns
RAS Precharge Time
tRP
18
-
20
-
15
-
20
-
20
-
20
-
20
-
ns
RAS to RAS Bank Active Delay
tRRD
12
-
14
-
15
-
15
-
16
-
20
-
20
-
ns
CAS to CAS Delay
tCCD
1
-
1
-
1
-
1
-
1
-
1
-
1
- CLK
Write Command to Data-In Delay
tWTL
0
-
0
-
0
-
0
-
0
-
0
-
0
- CLK
Data-In to Precharge Command
tDPL
2
-
2
-
2
-
2
-
2
-
2
-
2
- CLK
Data-In to Active Command
tDAL
5
-
5
-
4
-
5
-
4
-
3
-
3
- CLK
DQM to Data-Out Hi-Z
tDQZ
2
-
2
-
2
-
2
-
2
-
2
-
2
- CLK
DQM to Data-In Mask
tDQM
0
-
0
-
0
-
0
-
0
-
0
-
0
- CLK
MRS to New Command
tMRD
2
-
2
-
2
-
2
-
2
-
2
-
2
- CLK
Precharge to Data ^{CAS Latency = 3 tPROZ3 3}
-
3
-
3
-
3
-
3
-
3
-
3
- CLK
Output Hi-Z
CAS Latency = 2 tPROZ2 2
-
2
-
2
-
2
-
2
-
2
-
2
- CLK
Power Down Exit Time
tPDE
1
-
1
-
1
-
1
-
1
-
1
-
1
- CLK
Self Refresh Exit Time
tSRE
1
-
1
-
1
-
1
-
1
-
1
-
1
- CLK 1
Refresh Time
tREF
-
64
-
64
-
64
-
64
-
64
-
64
-
64 ms
Note :
1. A new command can be given tRRC after self refresh exit
Rev. 1.0/Mar. 02
8