HY57V281620HCT-6I Datasheet, PDF (6/11 Pages) Hynix Semiconductor – 4 Banks x 2M x 16bits Synchronous DRAM

HY57V281620HC(L/S)T-I
DC CHARACTERISTICS II (TA= -40 to 85°C, VDD=3.3±0.3V, VSS=0V)
Parameter
Symbol
Test Condition
Speed
Unit Note
-6I -7I -KI -HI -8I -PI -SI
Operating Current
IDD1
Burst length=1, One bank active
tRC ≥ tRC(min), IOL=0mA
130 130 120 120 120 110 110 mA 1
Precharge Standby Current ^{IDD2P CKE ≤ VIL(max), tCK = 15ns}
in Power Down Mode
IDD2PS CKE ≤ VIL(max), tCK = ∞
2
mA
1
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
IDD2N Input signals are changed one time during
20
Precharge Standby Current
in Non Power Down Mode
IDD2NS
30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V
CKE ≥ VIH(min), tCK = ∞
Input signals are stable.
mA
15
Active Standby Current
in Power Down Mode
IDD3P CKE ≤ VIL(max), tCK = 15ns
IDD3PS CKE ≤ VIL(max), tCK = ∞
5
mA
5
CKE ≥ VIH(min), CS ≥ VIH(min), tCK = 15ns
IDD3N Input signals are changed one time during
30
Active Standby Current
in Non Power Down Mode
30ns. All other pins ≥ VDD-0.2V or ≤ 0.2V
IDD3NS ^{CKE ≥ VIH(min), tCK = ∞}
Input signals are stable.
mA
20
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
CL=3
CL=2
150 140 130 130 130 110 110
mA 1
160 140 140 140 140 120 120
Auto Refresh Current
IDD5 tRRC ≥ tRRC(min), All banks active
240 240 220 220 200 200 200 mA 2
2
mA 3
Self Refresh Current
IDD6 CKE ≤ 0.2V
800
uA
4
500
uA
5
Note :
1.IDD1 and IDD4 depend on output loading and cycle rates. Specified values are measured with the output open
2.Min. of tRRC (Refresh RAS cycle time) is shown at AC CHARACTERISTICS II
3.HY57V281620HCT-6I/KI/HI/8I/PI/SI
4.HY57V281620HCLT-6I/KI/HI/8I/PI/SI
5.HY57V281620HCST-6I/KI/HI/8I/PI/SI
Rev. 1.0/Mar. 02
6