HYMD564M646A6-J Datasheet, PDF (7/17 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

CAPACITANCE (TA=25^oC, f=100MHz )
HYMD564M646A(L)6-J/K/H
Parameter
Pin
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Input Capacitance
Data Input / Output Capacitance
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0, CKE1
/CS0, /CS1
CK0, /CK0, CK1, /CK1
DM0 ~ DM7
DQ0 ~ DQ63, DQS0 ~ DQS7
Symbol Min
CIN1
39
CIN2
39
CIN3
32
CIN4
32
CIN5
22
CIN6
12
CIO1
12
Max
49
49
42
42
28
17
17
Unit
pF
pF
pF
pF
pF
pF
pF
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Output
VTT
RT=50Ω
Zo=50Ω
CL=30pF
VREF
Rev. 0.4 / Oct. 2004
7