HYMD264G726BL4M-M Datasheet, PDF (7/17 Pages) Hynix Semiconductor – Low Profile Registered DDR SDRAM DIMM

CAPACITANCE (TA=25^oC, f=100MHz )
HYMD264G726B(L)4M-M/K/H/L
Parameter
Pin
Input Capacitance
Input Capacitance
Input Capacitance
A0 ~ A12, BA0, BA1
/RAS, /CAS, /WE
CKE0
Input Capacitance
CS0
Input Capacitance
CK0, /CK0
Data Input / Output Capacitance DQ0 ~ DQ63, DQS0 ~ DQS17
Data Input / Output Capacitance CB0 ~ CB7
Symbol Min
CIN1
5
CIN2
5
CIN3
5
CIN4
5
CIN5
8
CIO1
8
CIO2
8
Max
12
12
12
12
11
11
11
Unit
pF
pF
pF
pF
pF
pF
pF
Note :
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Output
VTT
RT=50Ω
Zo=50Ω
CL=30pF
VREF
Rev. 0.2/ Dec. 2003
7