HYMD216M726AL6-J Datasheet, PDF (7/19 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

HYMD216M726A(L)6-J/M/K/H/L
DC CHARACTERISTICS I (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Add, CMD, /CS, /CKE
Input Leakage
Current
CK0, /CK0, CK1, /CK1
ILI
CK2, /CK2
Output Leakage Current
Output High Voltage
Output Low Voltage
ILO
VOH
VOL
Note :
1. VIN = 0 to 3.6V, All other pins are not tested under VIN =0V
2. DOUT is disabled, VOUT=0 to 2.7V
Min.
-10
-8
0
-5
VTT + 0.76
-
Max
10
8
0
5
-
VTT - 0.76
Unit
Note
uA
1
uA
2
V
IOH = -15.2mA
V
IOL = +15.2mA
Rev. 0.3/Oct. 02
7