HY57V641620ET Datasheet, PDF (7/13 Pages) Hynix Semiconductor – 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

Synchronous DRAM Memory 64Mbit (4Mx16bit)
HY57V641620E(L/S)T(P) Series
ABSOLUTE MAXIMUM RATING
Ambient Temperature
Parameter
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Short Circuit Output Current
Power Dissipation
Soldering Temperature / Time
Symbol
TA
TSTG
VIN, VOUT
VDD, VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-1.0 ~ 4.6
-1.0 ~ 4.6
50
1
260 / 10
Unit
o_C
o_C
V
V
mA
W
o_{C / Sec}
DC OPERATING CONDITION (TA= 0 to 70^oC)
Parameter
Power Supply Voltage
Input High Voltage
Input Low Voltage
Symbol
Min
Typ
VDD, VDDQ
3.0
3.3
VIH
2.0
3.0
VIL
-0.3
-
Note: 1. All voltages are referenced to VSS = 0V
2. VIH(max) is acceptable 5.6V AC pulse width with <=3ns of duration.
3. VIL(min) is acceptable -2.0V AC pulse width with <=3ns of duration.
Max
3.6
VDDQ + 0.3
0.8
Unit
V
V
V
AC OPERATING TEST CONDITION (TA= 0 to 70 ^oC, VDD=3.3±0.3V, VSS=0V)
Parameter
AC Input High/Low Level Voltage
Input Timing Measurement Reference Level Voltage
Input Rise/Fall Time
Output Timing Measurement Reference Level Voltage
Output Load Capacitance for Access Time Measurement
Symbol
VIH / VIL
Vtrip
tR / tF
Voutref
CL
Value
2.4 / 0.4
1.4
1
1.4
30
Unit
V
V
ns
V
pF
Note: 1.
Vtt=1.4V
Vtt=1.4V
Output
RT=500 Ω
30pF
Output
Z0 = 50Ω
RT=50 Ω
30pF
Note
1
1, 2
1, 3
Note
1
DC Output Load Circuit
AC Output Load Circuit
Rev. 1.5 / Feb. 2005
7