HY57V641620ET Datasheet, PDF (1/13 Pages) Hynix Semiconductor – 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O

64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O
Document Title
4Bank x 1M x 16bits Synchronous DRAM
Revision History
Revision No.
History
First Version Release
1.0
1. Changed tOH: 2.0 --> 2.5
[tCK = 7 & 7.5 (CL3) Product]
1. Changed Input High/Low Voltage (Page 08)
2. Changed DC characteristics (Page 09)
- IDD2NS: 18mA -> 15mA
1.1
- IDD5:210 / 195 / 180mA -> 170 / 160 / 150mA
[Speed 200 / 166 / 143 / 133MHz]
3. Changed Clock High / Low pulse width Time (Page 11)
4. Changed tAC Time (Page11)
5. Changed tRRD Time (Page12)
1. Corrected Revision No.: 2.0 -> 1.1
2. Deleted Remark at Revision History
3. Corrected AC OPERATING CONDITION
1.2
- CL 50pF -> 30pF
4. Changed DC OPERATING CONDITION
- VIH MAX VDDQ+2.0 -> VDDQ+0.3 and Typ 3.3 -> 3.0
- VIL MIN VSSQ-2.0 -> -0.3
1.3
1. Modified note for Super Low Power in ORDERING INFORMATION
1.4
1. Corrected PIN ASSIGNMENT A12 to NC
1.5
1. Corrected comments for overshoot and undershoot
Draft Date
Nov. 2004
Dec. 2004
Dec. 2004
Jan. 2005
Jan. 2005
Feb. 2005
Remark
This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 1.5 / Feb. 2005
1