GM71V17403C Datasheet, PDF (7/10 Pages) Hynix Semiconductor – 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

EDO Page Mode Cycle
Symbol
Parameter
tHPC
tRASP
tACP
tRHCP
tDOH
tCOL
tCOP
tRCHP
EDO Page Mode Cycle Time
EDO Page Mode RAS Pulse Width
Access Time from CAS Precharge
RAS Hold Time from CAS Precharge
Output data Hold Time from CAS low
CAS Hold Time referred OE
CAS to OE Setup Time
Read command Hold Time
from CAS Precharge
GM71V17403C
GM71VS17403CL
GM71V(S)17403 GM71V(S)17403 GM71V(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
Unit
Note
20 - 25 - 30 -
ns
20
- 100,000 - 100,000 - 100,000
ns
16
- 30 - 35 - 40 ns 9,17,19
30 - 35 - 40 -
ns
3-3 - 3
ns
9
8 - 10 - 13
ns
5-5-5
ns
30 - 35 - 40
ns
EDO Page Mode Read-Modify-Write Cycle
Symbol
Parameter
GM71V(S)17403 GM71V(S)17403 GM71V(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
tHPRWC EDO Page Mode Read-Modify-Write
Cycle Time
57 - 68 - 79 -
tCPW WE Delay Time from CAS Precharge
45 - 54 - 62 -
Unit
ns
ns
Note
14
Test Mode Cycle ^∗18
Symbol
Parameter
tWTS Test Mode WE Setup Time
tWTH Test Mode WE Hold Time
GM71V(S)17403 GM71V(S)17403 GM71V(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
0- 0 - 0-
10 - 10 - 10 -
Unit
ns
ns
Note
Refresh
Symbol
Parameter
tREF
Refresh Period
tREF
Refresh Period (L - version)
GM71V(S)17403 GM71V(S)17403 GM71V(S)17403
C/CL-5
C/CL-6
C/CL-7
Min Max Min Max Min Max
- 32 - 32 - 32
- 128 - 128 - 128
Unit
ms
ms
Note
2048
cycles
2048
cycles
Rev 0.1 / Apr’01