GM71V17403C Datasheet, PDF (3/10 Pages) Hynix Semiconductor – 4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

GM71V17403C
GM71VS17403CL
DC Electrical Characteristics (VCC = 3.3V+/-0.3V, VSS = 0V, TA = 0 ~ 70C)
Symbol
VOH
VOL
ICC1
ICC2
ICC3
ICC4
ICC5
ICC6
ICC7
ICC8
ICC9
IL(I)
IL(O)
Parameter
Output Level
Output "H" Level Voltage (IOUT = -2mA)
Output Level
Output "L" Level Voltage (IOUT = 2mA)
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling : tRC = tRC min)
50ns
60ns
70ns
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)
RAS Only Refresh Current
Average Power Supply Current
RAS Only Refresh Mode
(tRC = tRC min)
EDO Page Mode Current
Average Power Supply Current
EDO Page Mode
(tHPC = tHPC min)
50ns
60ns
70ns
50ns
60ns
70ns
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, DOUT = High-Z)
CAS-before-RAS Refresh Current
(tRC = tRC min)
50ns
60ns
70ns
Battery Backup Operating Current(Standby with CBR Refresh)
(CBR refresh, tRC = 31.3us, tRAS <= 0.3us,
DOUT = High-Z, CMOS interface)
Standby Current RAS = VIH
CAS = VIL
DOUT = Enable
Self-Refresh Mode Current
(RAS, CAS<=0.2V, DOUT=High-Z, CMOS interface)
Input Leakage Current
Any Input (0V<=VIN<= 4.6V)
Output Leakage Current
(DOUT is Disabled, 0V<=VOUT<= 4.6V)
Min
2.4
0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-10
-10
Max
VCC
0.4
100
90
80
2
100
90
80
90
80
75
1
100
100
90
80
300
5
200
10
10
Unit
V
V
mA
mA
mA
mA
mA
uA
mA
uA
mA
uA
uA
uA
Note
1, 2
2
1, 3
5
4,5
1
5
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.
2. Address can be changed once or less while RAS = VIL.
3. Address can be changed once or less while CAS = VIH.
4. CAS = L (<=0.2) while RAS = L (<=0.2).
5. L - Version.
Rev 0.1 / Apr’01