HY27UF084G2B Datasheet, PDF (51/51 Pages) Hynix Semiconductor – 4Gbit (512Mx8bit) NAND Flash

1
HY27UF(08/16)4G2B Series
4Gbit (512Mx8bit) NAND Flash
MARKING INFORMATION - TSOP1
Packag
M arking Exam ple
TSOP1
K
O
R
H
Y
2
7
U
F
x
x
4
G
2
B
x
x
x
x
Y WW
x
x
- hynix
- KOR
- HY27UFxx4G2B xxxx
H Y: Hynix
27: NAND Flash
U: Pow er Supply
F: Classification
xx : Bit Organization
4G: Density
2: Mode
B: Version
x: Package Type
x: Package M aterial
x: Operating Tem perature
x: Bad Block
: Hynix Sym bol
: Origin Country
: Part Number
: U(2.7V~3.6V)
: Single Level Cell+Single Die+Large Block
: 08(x8), 16(x16)
: 4Gbit
: 2(1nCE & 1R/nB; Sequential Row Read Disable)
: 3rd Generation
: T(48-TSOP1)
: Blank(Norm al), P(Lead Free)
: C(0℃ ~70℃ ), I(-40℃ ~85℃ )
: B(Included Bad Block), S(1~5 Bad Block),
P(All Good Block)
- Y: Year (ex: 5=year 2005, 6= year 2006)
- ww : W ork W eek (ex: 12= work week 12)
- xx: Process Code
N ote
- Capital Letter
: Fixed Item
- Sm all Letter
: Non-fixed Item
Rev 0.4 / Jan. 2008
51