HY27UF084G2B Datasheet, PDF (19/51 Pages) Hynix Semiconductor – 4Gbit (512Mx8bit) NAND Flash

1
HY27UF(08/16)4G2B Series
4Gbit (512Mx8bit) NAND Flash
Parameter
Operating
Current
Sequential
Read
Program
Erase
Stand-by Current (TTL)
Stand-by Current (CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage
Output High Voltage Level
Output Low Voltage Level
Output Low Current (R/B)
Symbol
Test Conditions
Min
ICC1
tRC=25ns
CE=VIL, IOUT=0mA
-
ICC2
-
-
ICC3
-
-
ICC4
CE=VIH,
WP=0V/Vcc
-
ICC5
CE=Vcc-0.2,
WP=0V/Vcc
-
ILI
VIN=0 to Vcc (max)
-
ILO
VOUT =0 to Vcc (max)
-
VIH
-
0.8xVcc
VIL
-
-0.3
VOH
IOH=-400uA
2.4
VOL
IOL=2.1mA
-
IOL
(R/B)
VOL=0.4V
8
Table 9: DC and Operating Characteristics
3.3Volt
Typ
15
15
15
10
-
-
-
-
-
-
10
Max
30
30
30
1
50
± 10
± 10
Vcc+0.3
0.2xVcc
-
0.4
-
Unit
mA
mA
mA
mA
uA
uA
uA
V
V
V
V
mA
Parameter
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing Levels
Output Load (2.7V - 3.6V)
Table 10: AC Conditions
Value
3.3Volt
0V to VCC
5ns
VCC/2
1 TTL GATE and CL=50pF
Rev 0.4 / Jan. 2008
19