HY62LF16804B Datasheet, PDF (5/10 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62LF16804B Series
AC CHARACTERISTICS
Vcc = 2.3V~2.7V, TA= 0°C to 70°C/ -40°C to 85°C, unless otherwise specified
# Symbol Parameter
-70
-85
-10
Min. Max. Min. Max. Min Max. ^Unit
READ CYCLE
1 tRC
Read Cycle Time
70
-
85
-
100
-
ns
2 tAA
Address Access Time
-
70
-
85
-
100 ns
3 tACS
Chip Select Access Time
-
70
-
85
-
100 ns
4 tOE
Output Enable to Output Valid
-
35
-
40
-
45 ns
5 tBA
/LB, /UB Access Time
-
70
-
85
-
100 ns
6 tCLZ
Chip Select to Output in Low Z
10
-
10
-
10
- ns
7 tOLZ
Output Enable to Output in Low Z
5
-
5
-
5
- ns
8 tBLZ
/LB, /UB Enable to Output in Low Z
10
-
10
-
10
- ns
9 tCHZ
Chip Deselection to Output in High Z
0
30
0
30
0
30 ns
10 tOHZ Out Disable to Output in High Z
0
30
0
30
0
30 ns
11 tBHZ
/LB, /UB Disable to Output in High Z
0
30
0
30
0
30 ns
12 tOH
Output Hold from Address Change
10
-
10
-
15
- ns
WRITE CYCLE
13 tWC
Write Cycle Time
70
-
85
-
100
-
ns
14 tCW
Chip Selection to End of Write
60
-
70
-
80
- ns
15 tAW
Address Valid to End of Write
60
-
70
-
80
- ns
16 tBW
/LB, /UB Valid to End of Write
60
-
70
-
80
- ns
17 tAS
Address Set-up Time
0
-
0
-
0
- ns
18 tWP
Write Pulse Width
50
-
60
-
70
- ns
19 tWR
Write Recovery Time
0
-
0
-
0
- ns
20 tWHZ Write to Output in High Z
0
20
0
25
0
25 ns
21 tDW
Data to Write Time Overlap
30
-
35
-
45
- ns
22 tDH
Data Hold from Write Time
0
-
0
-
0
- ns
23 tOW
Output Active from End of Write
5
-
5
-
10
- ns
AC TEST CONDITIONS
TA= 0°C to 70°C(Commercial)/ -40°C to 85°C, unless otherwise specified
PARAMETER
Value
Input Pulse Level
0.4V to 2.2V
Input Rise and Fall Time
5ns
Input and Output Timing Reference Level
1.1V
Output Load
tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW
Other
CL = 5pF + 1TTL Load
CL = 30pF + 1TTL Load
AC TEST LOADS
V_{TM = 2.3V}
D
OUT
3067 Ohm
CL(1)
3345 Ohm
Note
1. Including jig and scope capacitance
Rev.00/May. 2001
4