HY62LF16804B Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62LF16804B Series
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min.
2.3
0
2.0
-0.3(1)
Typ.
2.5
0
-
-
Max.
Unit
2.7
V
0
V
Vcc+0.3
V
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.3V~2.7V, TA = 0°C to 70°C / -40°C to 85°C
Sym
Parameter
Test Condition
ILI Input Leakage Current
ILO Output Leakage Current
Icc Operating Power Supply
Current
Icc1
Average Operating
Current
ISB TTLStandbyCurrent
(TTL Input)
ISB1 Standby Current
(CMOS Input)
VOL Output Low Voltage
VOH Output High Voltage
Vss < VIN < Vcc
Vss < VOUT < Vcc, /CS = VIH or
/OE = VIH or /WE = VIL,
/UB = /LB = VIH
/CS = VIL, VIN = VIH or VIL, II/O = 0mA
Cycle Time=Min,100% duty,
II/O = 0mA, /CS = VIL,VIN = VIH or VIL
Cycle time = 1us, 100% duty,
II/O = 0mA, /CS < 0.2V, VIN<0.2V
/CS = VIH or /UB=/LB= VIH,
VIN = VIH or VIL
/CS > Vcc - 0.2V or
SL
/UB=/LB > Vcc-0.2V,
VIN > Vcc-0.2V or
LL
VIN < Vss+0.2V
IOL = 0.5mA
IOH = -0.5mA
Note :
1. Typical values are at Vcc = 2.5V, TA = 25°C
2. Typical values are not 100% tested
Min.
Typ
.
Max.
Unit
-1
-
1
uA
-1
-
1
uA
-
-
3 mA
- 30 mA
-
-
5 mA
-
- 0.1 mA
-
-
8
uA
-
1 20 uA
-
- 0.4 V
2.0 -
-
V
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
CIN
COUT
Input Capacitance(Add, /CS, /WE, /UB, /LB, /OE)
Output Capacitance(I/O)
Conditio
n
VIN = 0V
VI/O = 0V
Max.
8
10
Unit
pF
pF
Note : These parameters are sampled and not 100% tested
Rev.00/May. 2001
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