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| HMT451V7AFR8A Datasheet, PDF (40/69 Pages) Hynix Semiconductor – DDR3L SDRAM VLP Registered DIMM Based on 4Gb A-die | |||
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Refresh parameters by device density
Refresh parameters by device density
Parameter
RTT_Nom Setting
512Mb 1Gb 2Gb 4Gb 8Gb Units Notes
REF command ACT or
REF command time
tRFC
90
110
160
260
350 ns
Average periodic
refresh interval
tREFI
0 ï°C ï£ TCASE ï£ 85 ï°C
85 ï°C ï¼ TCASE ï£ 95 ï°C
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
7.8 us
3.9 us 1
Notes:
1. Users should refer to the DRAM supplier data sheet and/or the DIMM SPD to determine if DDR3 SDRAM devices
support the following options or requirements referred to in this materia.
Rev. 0.1 / May. 2013
40
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