HYMD512G726BF8N-D43 Datasheet, PDF (4/16 Pages) Hynix Semiconductor – Registered DDR SDRAM DIMM

HYMD512G726B(L)F8N-D43/J
ABSOLUTE MAXIMUM RATINGS
Parameter
Ambient Temperature
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Output Short Circuit Current
Power Dissipation
Soldering Temperature Þ Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
50
18
260 / 10
Note : Operation at above absolute maximum rating can adversely affect device reliability
Unit
o_C
o_C
V
V
V
mA
W
o_{C / Sec}
DC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS= 0V)
Parameter
Symbol
Min
Typ.
Max
Unit
Power Supply Voltage
Power Supply Voltage
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
VDD
VDD
VDDQ
VDD
VIH
VIL
VTT
VREF
2.3
2.5
2.7
V
2.5
2.6
2.7
V
2.3
2.5
2.7
V
2.5
2.6
2.7
V
VREF + 0.15
-
VDDQ + 0.3
V
-0.3
-
VREF - 0.15
V
VREF - 0.04
VREF
VREF + 0.04
V
0.49*VDDQ 0.5*VDDQ 0.51*VDDQ
V
Note :
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. The value of VREF is approximately equal to 0.5VDDQ.
4. For DDR400, VDD=2.6V +/- 0.1V, VDDQ=2.6V+/-0.1V
Note
4
1
1,4
2
3
Rev. 0.1 / Mar. 2004
4