HY62UF16804A Datasheet, PDF (4/10 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62UF16804A
RECOMMENDED DC OPERATING CONDITION
Symbol
Vcc
Vss
VIH
VIL
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Min. Typ. Max. Unit
2.7 3.0
3.3
V
0
0
0
V
2.2
- Vcc+0.3 V
-0.3(1) -
0.6
V
Note : 1. VIL = -1.5V for pulse width less than 30ns
DC ELECTRICAL CHARACTERISTICS
Vcc = 2.7V~3.3V, TA = 0°C to 70°C/ -40°C to 85°C
Sym
Parameter
Test Condition
Min. Typ. Max. Unit
ILI Input Leakage Current
Vss < VIN < Vcc
-1
-
1
uA
Vss < VOUT < Vcc, /CS = VIH or
ILO Output Leakage Current
/OE = VIH or /WE = VIL,
-1
-
1
uA
/UB = /LB = VIH
Icc
Operating Power Supply
Current
/CS = VIL, VIN = VIH or VIL, II/O = 0mA -
-
4 mA
Icc1
Average Operating
Current
Cycle Time=Min,100% duty,
II/O = 0mA, /CS = VIL,VIN = VIH or VIL
-
Cycle time = 1us, 100% duty,
II/O = 0mA, /CS < 0.2V, VIN<0.2V
-
-
40 mA
-
4 mA
ISB
TTL Standby Current
(TTL Input)
/CS = VIH or /UB=/LB= VIH,
VIN = VIH or VIL
-
-
0.5 mA
ISB1
Standby Current
(CMOS Input)
/CS > Vcc - 0.2V or
/UB=/LB > Vcc-0.2V,
VIN > Vcc-0.2V or
VIN < Vss+0.2V
SL
-
-
8
uA
LL
-
1
25 uA
VOL Output Low Voltage
IOL = 2.1mA
-
-
0.4
V
VOH Output High Voltage
IOH = -1.0mA
2.4
-
-
V
Note : Typical values are at Vcc = 3.0V, TA = 25°C
CAPACITANCE
(Temp = 25°C, f = 1.0MHz)
Symbol
Parameter
Condition Max. Unit
CIN
Input Capacitance(Add, /CS, /LB, /UB /WE, /OE) VIN = 0V
8
pF
COUT
Output Capacitance(I/O)
VI/O = 0V
10
pF
Note : These parameters are sampled and not 100% tested
Rev.10/Jan. 2002
3