HY62KT08081E Datasheet, PDF (4/12 Pages) Hynix Semiconductor – 32Kx8bit CMOS SRAM

HY62K(U,V)T08081E Series
RECOMMENDED DC OPERATING CONDITIONS
Symbol
Parameter
Vcc
Power Supply
HY62KT08081E
Voltage
HY62VT08081E
HY62UT08081E
Vss
Ground
VIH
Input High Voltage
VIL
Input Low Voltage
Note
1. VIL = -1.5V for pulse width less than 50ns
Min.
2.7
3.0
2.7
0
2.2
-0.3(1)
Typ.
Max. Unit
3.0/3.3
3.6
V
3.3
3.6
V
3.0
3.3
V
0
0
V
-
Vcc+0.3 V
-
0.4
V
TRUTH TABLE
/CS /WE /OE
Mode
H
X X Standby
L
H H Output Disabled
L
H L Read
L
L X Write
Note
1. H=VIH, L=VIL, X=Don't Care
I/O Operation
High-Z
High-Z
Data Out
Data In
DC CHARACTERISTICS
Vcc = 2.7~3.6V, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended) /-40°C to 85°C (Industrial),
unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
-1
-
1
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL,
-
-
2
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current /CS = VIL, VIN = VIH or VIL,
-
-
30
Min. Duty Cycle = 100%, II/O = 0mA
ICC2
Average Operating Current /CS = VIL, VIN = VIH or VIL
-
-
5
Cycle = 1us , II/O = 0mA
ISB
TTL Standby Current
/CS= VIH,
-
-
0.3
(TTL Inputs)
VIN = VIH or VIL
ISB1
CMOS Standby Current
/CS > Vcc - 0.2V,
0~70 °C
-
-
5
(CMOS Inputs)
VIN > Vcc - 0.2V or -25~85 °C or -
-
8
VIN < Vss + 0.2V _{-40~85 °C}
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4
VOH
Output High Voltage
IOH = -1.0mA
2.2
-
-
Note : Typical values are at Vcc =3.0/3.3V, TA = 25°C
Unit
uA
uA
mA
mA
mA
mA
uA
uA
V
V
Rev 02 / Apr. 2001
3