HY62KT08081E Datasheet, PDF (3/12 Pages) Hynix Semiconductor – 32Kx8bit CMOS SRAM

HY62K(U,V)T08081E Series
ORDERING INFORMATION
Part No.
Vcc
HY62KT08081E-DPC
HY62KT08081E-DPE
HY62KT08081E-DPI
HY62KT08081E-DGC
HY62KT08081E-DGE 2.7~3.6V
HY62KT08081E-DGI
HY62KT08081E-DTC
HY62KT08081E-DTE
HY62KT08081E-DTI
HY62VT08081E-DPC
HY62VT08081E-DPE
HY62VT08081E-DPI
HY62VT08081E-DGC
HY62VT08081E-DGE 3.0~3.6V
HY62VT08081E-DGI
HY62VT08081E-DTC
HY62VT08081E-DTE
HY62VT08081E-DTI
HY62UT08081E-DPC
HY62UT08081E-DPE
HY62UT08081E-DPI
HY62UT08081E-DGC
HY62UT08081E-DGE 2.7~3.3V
HY62UT08081E-DGI
HY62UT08081E-DTC
HY62UT08081E-DTE
HY62UT08081E-DTI
Note *. Measured at 30pF test load.
Speed
Power
70*/85/100ns LL-part
70/85/100ns LL-part
70*/85/100ns LL-part
Temp
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
0 to 70°C
-25 to 85°C
-40 to 85°C
Package
PDIP
SOP
TSOP-I Standard
PDIP
SOP
TSOP-I Standard
PDIP
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol
Parameter
Rating
Unit
Vcc, VIN, VOUT Power Supply, Input/Output Voltage
-0.3 to 4.6
V
TA
Operating Temperature HY62K(U,V)T08081E-C
0 to 70
°C
HY62K(U,V)T08081E-E -25 to 85
°C
HY62K(U,V)T08081E-I
-40 to 85
°C
TSTG
Storage Temperature
-65 to 150
°C
PD
Power Dissipation
1.0
W
IOUT
Data Output Current
50
mA
TSOLDER
Lead Soldering Temperature & Time
260 •10
°C•sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
Rev 02 / Apr. 2001
2