GM76V256C Datasheet, PDF (4/11 Pages) Hynix Semiconductor – 32K x8 bit 3.3V Low Power CMOS slow SRAM

GM76V256C Series
DC CHARACTERISTICS
Vcc = 3.3V ±10%, TA = 0°C to 70°C (Normal)/-25°C to 85°C (Extended), unless otherwise specified.
Symbol
Parameter
Test Condition
Min. Typ. Max.
ILI
Input Leakage Current
Vss < VIN < Vcc
-1
-
1
ILO
Output Leakage Current
Vss < VOUT < Vcc, /CS = VIH or
-1
-
1
/OE = VIH or /WE = VIL
Icc
Operating Power Supply
/CS = VIL,
-
-
2
Current
VIN = VIH or VIL, II/O = 0mA
ICC1
Average Operating Current /CS = VIL, VIN = VIH or VIL
-
-
35
Min. Duty Cycle = 100%, II/O = 0mA
ICC2
Average Operating Current /CS = VIL, VIN = VIH or VIL
-
-
5
Cycle = 1us , II/O = 0mA
ISB
TTL Standby Current
/CS= VIH,
-
-
0.5
(TTL Inputs)
VIN = VIH or VIL
ISB1
CMOS Standby Current
/CS > Vcc - 0.2V,
L
-
-
20
(CMOS Inputs)
VIN > Vcc - 0.2V or
LL
-
-
10
VIN < Vss + 0.2V
LE
-
-
30
LLE
-
-
15
VOL
Output Low Voltage
IOL = 2.1mA
-
-
0.4
VOH
Output High Voltage
IOH = -1.0mA
2.4
-
-
Unit
uA
uA
mA
mA
mA
mA
uA
uA
uA
uA
V
V
Note : Typical values are at Vcc =3.3V, TA = 25°C
AC CHARACTERISTICS(I)
Vcc = 3.3V ±10%, TA = 0°C to 70°C (Normal) / -25°C to 85°C (Extended) unless otherwise specified.
# Symbol
Parameter
-85
-10
Unit
Min. Max. Min Max.
READ CYCLE
1 tRC Read Cycle Time
85
-
100
-
ns
2 tAA
Address Access Time
-
85
-
100 ns
3 tACS Chip Select Access Time
-
85
-
100 ns
4 tOE Output Enable to Output Valid
-
45
-
50 ns
5 tCLZ Chip Select to Output in Low Z
10
-
10
- ns
6 tOLZ Output Enable to Output in Low Z
5
-
5
- ns
7 tCHZ Chip Disable to Output in High Z
0
30
0
35 ns
8 tOHZ Out Disable to Output in High Z
0
30
0
35 ns
9 tOH Output Hold from Address Change
10
-
15
- ns
WRITE CYCLE
10 tWC Write Cycle Time
85
-
100
-
ns
11 tCW Chip Selection to End of Write
75
-
80
- ns
12 tAW Address Valid to End of Write
70
-
80
- ns
13 tAS
Address Set-up Time
0
-
0
- ns
14 tWP Write Pulse Width
60
-
70
- ns
15 tWR Write Recovery Time
0
-
0
- ns
16 tWHZ Write to Output in High Z
0
30
0
30 ns
17 tDW Data to Write Time Overlap
35
-
40
- ns
18 tDH Data Hold from Write Time
0
-
0
- ns
19 tOW Output Active from End of Write
5
-
10
- ns
Rev 02 / Apr. 2001
3