HY62SF16806B Datasheet, PDF (3/11 Pages) Hynix Semiconductor – 512Kx16bit full CMOS SRAM

HY62SF16806B
ORDERING INFORMATION
Part No.
Speed
HY62SF16806B-DFC 70/85/100
HY62SF16806B-SFC 70/85/100
HY62SF16806B-DFI 70/85/100
HY62SF16806B-SFI 70/85/100
Note 1. C : Commercial, I : Industrial
Power
LL-part
SL-part
LL-part
SL-part
Package
FBGA
FBGA
FBGA
FBGA
Temp.
C
C
I
I
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
Parameter
Rating
Unit
Remark
VIN, VOUT
Input/Output Voltage
-0.3 to Vcc+0.3
V
Vcc
Power Supply
-0.3 to 2.6
V
TA
Operating Temperature
0 to 70
-40 to 85
°C
HY62SF16806B-C
°C
HY62SF16806B-I
TSTG
Storage Temperature
-55 to 150
°C
PD
Power Dissipation
1.0
W
TSOLDER
Ball Soldering Temperature & Time
260 • 10
°C • sec
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS1 CS2 /WE /OE /LB /UB Mode
I/O Pin
I/O1~I/O8 I/O9~I/O16
H
X
X
X XX
Hi-Z
Hi-Z
X
L
X
X XX
Deselected
Hi-Z
Hi-Z
X
X
X
X HH
Hi-Z
Hi-Z
L
L
H
H
H
H
H
H
L
X
X
L
Output Disabled
Hi-Z
Hi-Z
Hi-Z
Hi-Z
L
H
H
L
LH
DOUT
Hi-Z
HL
Read
Hi-Z
DOUT
LL
DOUT
DOUT
L
H
L
X LH
DIN
Hi-Z
HL
Write
Hi-Z
DIN
LL
DIN
DIN
Note:
1. H=VIH, L=VIL, X=don't care(VIH or VIL)
2. UB, LB(Upper, Lower Byte enable)
These active LOW inputs allow individual bytes to be written or read.
When LB is LOW, data is written or read to the lower byte, I/O1 -I/O8.
When UB is LOW, data is written or read to the upper byte, I/O9 -I/O16.
Power
Standby
Active
Active
Active
Rev.00 /May. 2001
2