HY5DU28422ETP Datasheet, PDF (27/35 Pages) Hynix Semiconductor – 128Mb DDR SDRAM

HY5DU28422ETP
HY5DU28822ETP
HY5DU281622ETP
AC Overshoot/Undershoot Specification for Address and Control Pins
This specification is intended for devices with no clamp protection and is guaranteed by design
Parameter
Maximum peak amplitude allowed for overshoot (See Figure 1):
Maximum peak amplitude allowed for undershoot (See Figure 1):
The area between the overshoot signal and VDD must be less than or equal to (See Figure 1):
The area between the undershoot signal and GND must be less than or equal to (See Figure 1):
Specification
DDR333 DDR200/266
1.5V
1.5V
1.5V
1.5V
4.5V - ns
4.5V - ns
4.5V - ns
4.5V - ns
5
Max. amplitude = 1.5V _Overshoot
4
3
2
1
Max. area = 4.5V-ns
VDD
0
GND
-1
-2
Undershoot
-3
0
1
2
3
4
5
6
Time(ns)
Figure 1: Address and Control AC Overshoot and Undershoot Definition
Overshoot/Undershoot Specification for Data, Strobe, and Mask Pins
Parameter
Specification
DDR333 DDR200/266
Maximum peak amplitude allowed for overshoot (See Figure 2):
1.2V
1.2V
Maximum peak amplitude allowed for undershoot (See Figure 2):
1.2V
1.2V
The area between the overshoot signal and VDD must be less than or equal to (See Figure 2): 2.4V - ns
2.4V - ns
The area between the undershoot signal and GND must be less than or equal to (See Figure 2): 2.4V - ns
2.4V - ns
5
Max. amplitude = 1.2V _Overshoot
4
3
2
1
Max. area = 2.4V-ns
VDD
0
GND
-1
-2
Undershoot
-3
0
1
2
3
4
5
6
Time(ns)
Figure 2: DQ/DM/DQS AC Overshoot and Undershoot Definition
Rev. 0.3 /Apr. 2006
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