HY5DU28422ETP Datasheet, PDF (23/35 Pages) Hynix Semiconductor – 128Mb DDR SDRAM

HY5DU28422ETP
HY5DU28822ETP
HY5DU281622ETP
ABSOLUTE MAXIMUM RATINGS
Parameter
Operating Temperature (Ambient)
Storage Temperature
Voltage on Any Pin relative to VSS
Voltage on VDD relative to VSS
Voltage on VDDQ relative to VSS
Output Short Circuit Current
Power Dissipation
Soldering Temperature ⋅ Time
Symbol
TA
TSTG
VIN, VOUT
VDD
VDDQ
IOS
PD
TSOLDER
Rating
0 ~ 70
-55 ~ 125
-0.5 ~ 3.6
-0.5 ~ 3.6
-0.5 ~ 3.6
50
1
260 ⋅ 10
Note: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=0 to 70 ^oC, Voltage referenced to VSS = 0V)
Unit
o_C
o_C
V
V
V
mA
W
o_{C ⋅ sec}
Parameter
Power Supply Voltage
Power Supply Voltage
Input High Voltage
Input Low Voltage
Termination Voltage
Reference Voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input Leakage Current
Output Leakage Current
Normal Strength
Output Driver
(VOUT=VTT ± 0.84)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Half Strength
Output Driver
(VOUT=VTT ± 0.68)
Output High Current
(min VDDQ, min VREF, min VTT)
Output Low Current
(min VDDQ, max VREF, max VTT)
Symbol
VDD
VDDQ
VIH
VIL
VTT
VREF
VIN(DC)
VID(DC)
VI(RATIO)
ILI
ILO
IOH
IOL
IOH
IOL
Min
2.3
2.3
VREF + 0.15
-0.3
VREF - 0.04
0.49*VDDQ
-0.3
0.36
0.71
-2
-5
-16.8
16.8
-13.6
13.6
Typ.
2.5
2.5
-
-
VREF
0.5*VDDQ
-
-
-
-
-
-
Max
2.7
2.7
VDDQ + 0.3
VREF - 0.15
VREF + 0.04
0.51*VDDQ
VDDQ+0.3
VDDQ+0.6
1.4
2
5
-
Unit
V
V
V
V
V
V
V
V
-
uA
uA
mA
Note
1
2
3
4
5
6
7
-
-
mA
-
-
mA
-
-
mA
Note:
1. VDDQ must not exceed the level of VDD.
2. VIL (min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on VREF may not exceed +/- 2% of the dc value.
4. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
5. The ratio of the pull-up current to the pull-down current is specified for the same temperature and voltage, over the
entire temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it
represents the maximum difference between pullup and pulldown drivers due to process variation. The full variation
in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source
voltages from 0.1 to 1.0.
6. VIN=0 to VDD, All other pins are not tested under VIN =0V.
7. DQs are disabled, VOUT=0 to VDDQ.
Rev. 0.3 /Apr. 2006
23