HY5DS283222BF Datasheet, PDF(27/28 Page) Hynix Semiconductor

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HY5DS283222BF Datasheet, PDF (27/28 Pages) Hynix Semiconductor – 128M(4Mx32) GDDR SDRAM

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CAPACITANCE (TA=25oC, f=1MHz )

1HY5DS283222BF(P)

Parameter

Input Clock Capacitance

Input Capacitance

Input / Output Capacitance

CK, /CK

All other input-only pins

DQ, DQS, DM

Symbol

Min

Max

Unit

CCK

CIN

CIO

Note :

1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V

2. Pins not under test are tied to GND.

3. These values are guaranteed by design and are tested on a sample basis only.

OUTPUT LOAD CIRCUIT

Output

VTT

RT=50â¦

Zo=50â¦

CL=30pF

VREF

Rev. 1.0 / Feb. 2005

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