HY5DU561622ETP Datasheet, PDF (25/30 Pages) Hynix Semiconductor – 256M(16Mx16) gDDR SDRAM

1HY5DU561622ETP
Parameter
Symbol
Data-In Hold Time to DQS-In (DQ & DM) tDH
Read DQS Preamble Time
tRPRE
Read DQS Postamble Time
tRPST
Write DQS Preamble Setup Time
tWPRES
Write DQS Preamble Hold Time
tWPREH
Write DQS Postamble Time
tWPST
Mode Register Set Delay
tMRD
Exit Self Refresh to Any Execute
Command
tXSC
Power Down Exit Time
Except Read
Command
tPDEX
Read
Command
tPDEX_RD
Average Periodic Refresh Interval
tREFI
28
Min Max
0.4
-
0.9
1.1
0.4
0.6
0
-
1.5
-
0.4
0.6
2
-
33
Min Max
0.4
-
0.9
1.1
0.4
0.6
0
-
1.5
-
0.4
0.6
2
-
36
Min Max
0.4
-
0.9
1.1
0.4
0.6
0
-
1.5
-
0.4
0.6
2
-
Unit Note
ns
3
CK
CK
ns
ns
CK
CK
200
-
200
-
200
-
CK 4
1tCK
+ tIS
-
1tCK
+ tIS
-
1tCK
+ tIS
-
CK
2tCK
+ tIS
-
2tCK
+ tIS
-
2tCK
+ tIS
-
CK
-
7.8
-
7.8
-
7.8
us
Rev. 1.1 / Oct. 2005
25