HY5DU323222Q Datasheet, PDF (23/29 Pages) Hynix Semiconductor – 32M(1Mx32) DDR SDRAM

1HY5DU323222Q
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter
Symbol
Test Condition
Speed
5
6
Operating Current
IDD1
Burst length=2, One bank active
tRC ≥ tRC(min), IOL=0mA
210
Precharge Standby Current
in Power Down Mode
IDD2P CKE ≤ VIL(max), tCK = min
20
Precharge Standby Current
in Non Power Down Mode
IDD2N
CKE ≥ VIH(min), /CS ≥ VIH(min),
tCK = min, Input signals are changed one
time during 2clks
80
Active Standby Current
in Power Down Mode
IDD3P CKE ≤ VIL(max), tCK = min
25
Active Standby Current
in Non Power Down Mode
IDD3N
CKE ≥ VIH(min), /CS ≥ VIH(min),
tCK = min, Input signals are changed one
time during 2clks
200
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL= 0mA
All banks active
350
Auto Refresh Current
IDD5
tRC ≥ tRFC(min),
All banks active
270
Self Refresh Current
IDD6 CKE ≤ 0.2V
3
Unit
Note
mA
1
mA
mA
mA
mA
mA
1
mA
1,2
mA
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 0.5 / Jun. 2005
23