HY5PS12421CFP-E3 Datasheet, PDF (22/38 Pages) Hynix Semiconductor – 512Mb DDR2 SDRAM

1HY5PS12421C(L)FP
1HY5PS12821C(L)FP
1HY5PS121621C(L)FP
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(Refer to notes for information related to this table at the following pages of this table)
Parameter
Symbol
DDR2-400
min
max
DDR2-533
min
max
Read preamble
tRPRE
0.9
1.1
0.9
1.1
Read postamble
tRPST
0.4
0.6
0.4
0.6
Active to active command period for 1KB
tRRD
7.5
-
7.5
-
page size products
Active to active command period for 2KB
tRRD
10
-
10
-
page size products
Four Active Window for 1KB page size
tFAW
37.5
-
37.5
-
products
Four Active Window for 2KB page size
tFAW
50
-
50
-
products
CAS to CAS command delay
tCCD
2
2
Write recovery time
tWR
15
-
15
-
Auto precharge write recovery + precharge
tDAL
time
WR+tRP
-
WR+tRP
-
Internal write to read command delay
tWTR
10
-
7.5
-
Internal read to precharge command delay tRTP
7.5
7.5
Exit self refresh to a non-read command tXSNR tRFC + 10
tRFC + 10
Exit self refresh to a read command
tXSRD
200
-
200
-
Exit precharge power down to any non-
tXP
read command
2
-
2
-
Exit active power down to read command tXARD
2
2
Exit active power down to read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
tXARDS
t_CKE
t_AOND
t_AON
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
t_AONPD
t_AOFD
t_AOF
ODT turn-off (Power-Down mode)
t_AOFPD
ODT to power down entry latency
ODT power down exit latency
OCD drive mode output delay
Minimum time clocks remains ON after CKE
asynchronously drops LOW
tANPD
tAXPD
tOIT
tDelay
6 - AL
6 - AL
3
3
2
tAC(min)
tAC(min)+
2
2.5
tAC(min)
tAC(min)+
2
3
8
0
tIS+tCK+t
IH
2
tAC(max)
+1
2tCK+
tAC(max)
+1
2.5
tAC(max)
+ 0.6
2.5tCK+
tAC(max)
+1
12
2
tAC(min)
tAC(min)+
2
2.5
tAC(min)
tAC(min)+
2
3
8
0
tIS+tCK+t
IH
2
tAC(max)
+1
2tCK+
tAC(max)
+1
2.5
tAC(max)
+ 0.6
2.5tCK+
tAC(max)
+1
12
Unit
tCK
tCK
ns
ns
ns
ns
tCK
ns
tCK
ns
ns
ns
tCK
tCK
tCK
tCK
tCK
tCK
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
Note
4
4
14
24
3
1
1, 2
27
16
17
15
Rev. 0.8 / Oct. 2007
22