HY5PS12421CFP-E3 Datasheet, PDF (20/38 Pages) Hynix Semiconductor – 512Mb DDR2 SDRAM

1HY5PS12421C(L)FP
1HY5PS12821C(L)FP
1HY5PS121621C(L)FP
3.5. Input/Output Capacitance
Parameter
DDR2- 400
Symbol ^{DDR2- 533}
Min Max
DDR2 667
Min Max
DDR2 800
Units
Min Max
Input capacitance, CK and CK
CCK 1.0 2.0 1.0 2.0 1.0 2.0 pF
Input capacitance delta, CK and CK
CDCK
x 0.25 x 0.25 x 0.25 pF
Input capacitance, all other input-only pins
CI
1.0 2.0 1.0 2.0 1.0 1.75 pF
Input capacitance delta, all other input-only pins
CDI
x 0.25 x 0.25 x 0.25 pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO 2.5 4.0 2.5 3.5 2.5 3.5 pF
Input/output capacitance delta, DQ, DM, DQS, DQS CDIO
x 0.5 x 0.5 x 0.5 pF
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ T_CASE ≤ 95℃; V_DDQ = 1.8 V +/- 0.1V; V_DD = 1.8V +/- 0.1V)
Refresh Parameters by Device Density
Parameter
Refresh to Active
/Refresh command time
Symbol
tRFC
256Mb 512Mb 1Gb
75
105 127.5
0 ℃≤ T_CASE ≤ 85℃ _7.8
Average periodic refresh interval _tREFI
85℃ < T_CASE ≤ 95℃ _3.9
7.8 7.8
3.9 3.9
2Gb
195
7.8
3.9
4Gb Units
327.5 ns
7.8 us
3.9 us
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
Speed
Bin(CL-tRCD-tRP)
Parameter
CAS Latency
tRCD
tRP
tRAS
tRC
DDR2-800D
5-5-5
min
5
12.5
12.5
45
57.25
DDR2-800E
6-6-6
min
6
15
15
45
60
DDR2-667D
5-5-5
min
5
15
15
45
60
DDR2-533C
4-4-4
min
4
15
15
45
60
DDR2-400B Units
3-3-3
min
5
tCK
15
ns
15
ns
40
ns
55
ns
Rev. 0.8 / Oct. 2007
20