HY5DU561622CTP Datasheet, PDF (22/30 Pages) Hynix Semiconductor – 256M(16Mx16) gDDR SDRAM

1HY5DU561622CTP
DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
Parameter Symbol
Test Condition
Speed
Unit Note
28 33 36 4 5 6
Operating Current
IDD1
One bank; Active - Read - Precharge;
Burst Length=4; tRC=tRC(min);
tCK=tCK(min); address and control
inputs changing once per clock cycle;
IOUT=0mA
180 180 170 160 150 150 mA
Precharge Power
Down Standby
Current
IDD2P
All banks idle; Power down mode;
CKE=Low, tCK=tCK(min)
20
mA
Idle Standby
Current
/CS=High, All banks idle;
tCK=tCK(min);
IDD2F CKE=High; address and control inputs 100 100 90
80
70
70 mA
changing once per clock cycle.
VIN=VREF for DQ, DQS and DM
Active Power
Down
Standby Current
IDD3P
One bank active; Power down mode ;
CKE=Low, tCK=tCK(min)
45
45
40
35
30
30 mA
Active Standby
Current
/CS=HIGH; CKE=HIGH; One bank;
Active-Precharge; tRC=tRAS(max);
tCK=tCK(min);
IDD3N DQ, DM and DQS inputs changing twice 110 110 100 90
80
80 mA
per clock cycle; Address and other
control inputs changing once per clock
cycle
Burst=2;Reads; Continuous burst; One
IDD4R
bank active; Address and control inputs
changing once per clock cycle;
mA
tCK=tCK(min); IOUT=0mA
Operating Current
Burst=2; Writes; Continuous burst; One ^{260 260 240 220 200 200}
bank active; Address and control inputs
IDD4W changing once per clock cycle;
mA
tCK=tCK(min); DQ, DM and DQS inputs
changing twice per clock cycle
Auto Refresh
Current
IDD5 tRC=tRFC(min); All banks active
240 240 220 200 180 180 mA
Self Refresh
Current
IDD6
CKE=<0.2V; External clock on;
tCK=tCK(min)
4
mA
Rev. 0.5 / Feb. 2006
22