HY5DU283222F Datasheet, PDF (22/30 Pages) Hynix Semiconductor – 128M(4Mx32) GDDR SDRAM

DC CHARACTERISTICS II (TA=0 to 70^oC, Voltage referenced to VSS = 0V)
HY5DU283222F
Parameter
Sym
bol
Test Condition
Speed
26 28 33 36
4
Unit Note
5
Operating Current
IDD1
Burst length=4,Onebankactive
tRC ≥ tRC(min), IOL=0mA
300
300
280
280
280
260 mA 1
Precharge Standby
Current in Power Down IDD2P CKE ≤ VIL(max), tCK=min
Mode
30
30
30
30
30
20 mA
Precharge Standby
CKE ≥ VIH(min), /CS ≥ VIH(min),
Current in Non Power IDD2N tCK = min, Input signals are
100
100
90
90
90
80 mA
Down Mode
changed one time during 2clks
Active Standby Cur-
rent in Power Down
Mode
IDD3P CKE ≤ VIL(max), tCK=min
35
35
35
35
35
25 mA
Active Standby Cur-
CKE ≥ VIH(min), /CS ≥ VIH(min),
rent in Non Power
IDD3N tCK=min, Input signals are
160
160
130
130
130
100 mA
Down Mode
changed one time during 2clks
CL=4 630
600
470
450
450
370 mA 1
Burst Mode Operating
Current
IDD4
tCK ≥ tCK(min), IOL=0mA
All banks active
CL=3 630
600
470
450
450
370 mA 1
Auto Refresh Current
IDD5
tRC ≥ tRFC(min),
All banks active
Self Refresh Current IDD6 CKE ≤ 0.2V
300
300
270
270
3
3
3
3
270
mA 1,2
3
mA
Note :
1. IDD1, IDD4 and IDD5 depend on output loading and cycle rates. Specified values are measured with the output open.
2. Min. of tRFC (Auto Refresh Row Cycle Time) is shown at AC CHARACTERISTICS.
Rev. 1.2/Sep. 02
22