HY62SF16406E Datasheet, PDF (2/11 Pages) Hynix Semiconductor – 256Kx16bit full CMOS SRAM

HY62SF16406E Series
DESCRIPTION
The HY62SF16406E is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
256K words by 16bits. The HY62SF16406E uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.2V(min) data retention
• Standard pin configuration
-. 48-ball FBGA
Product No.
Voltage
(V)
HY62SF16406E-I 1.65~2.3
Note 1. I : Industrial
2. Current value is max.
Speed (ns)
70
Operation
Current/Icc(mA)
1.0
Standby
Current(uA)
SL
LL
6
10
Temperature
(°C)
-40~85
PIN CONNECTION
1 2 34 5 6
A
/LB /OE A0 A1 A2 CS2
B
IO9 /UB A3 A4 /CS1 IO1
C
IO10 IO11 A5 A6 IO2 IO3
D
Vss IO12 A17 A7 IO4 Vcc
E
Vcc IO13 NC A16 IO5 Vss
IO15 IO14 A14 A15 IO6 IO7
F
IO16 NC A12 A13 /WE IO8
A17
G
H
NC A8 A9 A10 A11 NC
/CS1
CS2
/OE
FBGA
/LB
/UB
/WE
PIN DESCRIPTION
BLOCK DIAGRAM
ROW
DECODER
MEMORY ARRAY
256K x 16
I/O1
I/O8
I/O9
I/O16
Pin Name
/CS1, CS2
/WE
/OE
/LB
/UB
Pin Function
Chip Select
Write Enable
Output Enable
Lower Byte Control (I/O1~I/O8)
Upper Byte Control (I/O9~I/O16)
Pin Name
I/O1~I/O16
A0~A17
Vcc
Vss
NC
Pin Function
Data Inputs/Outputs
Address Inputs
Power (1.65~2.3V)
Ground
No Connection
Rev.02 / May.02
2