HYMD216M646CL6-J Datasheet, PDF (13/20 Pages) Hynix Semiconductor – Unbuffered DDR SO-DIMM

HYMD216M646C(L)6-J/M/K/H/L
AC CHARACTERISTICS (AC operating conditions unless otherwise noted)
- continued -
Parameter
Symbol
Input Pulse Width
tIPW
Write DQS High Level Width
tDQSH
Write DQS Low Level Width
tDQSL
Clock to First Rising edge of DQS-In
tDQSS
Data-In Setup Time to DQS-In (DQ & DM)
tDS
Data-in Hold Time to DQS-In (DQ & DM)
tDH
DQ & DM Input Pulse Width
tDIPW
Read DQS Preamble Time
tRPRE
Read DQS Postamble Time
tRPST
Write DQS Preamble Setup Time
tWPRES
Write DQS Preamble Hold Time
tWPREH
Write DQS Postamble Time
tWPST
Mode Register Set Delay
tMRD
Exit Self Refresh to Any Execute Command tXSC
Average Periodic Refresh Interval
tREFI
DDR266A
Min
Max
2.2
0.35
-
0.35
-
0.75 1.25
0.45
-
0.45
-
1.75
-
0.9
1.1
0.4
0.6
0
-
0.25
-
0.4
0.6
2
-
200
-
-
15.6
DDR266B
Min
Max
2.2
0.35
-
0.35
-
0.75 1.25
0.45
-
0.45
-
1.75
-
0.9
1.1
0.4
0.6
0
-
0.25
-
0.4
0.6
2
-
200
-
-
15.6
DDR200
Min Max
2.5
-
0.35
-
0.35
-
0.72 1.28
0.5
-
0.5
-
1.75
-
0.9
1.1
0.4
0.6
0
-
0.25
-
0.4
0.6
2
-
200
-
-
15.6
Unit Note
ns
6
CK
CK
CK
ns
6,7,
ns ^11~13
ns
CK
CK
CK
CK
CK
CK
CK
8
us
Rev. 0.3 / Oct. 2004
13