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HMP164S6EFR6C-C4 Datasheet, PDF (13/23 Pages) Hynix Semiconductor – 200pin Unbuffered DDR2 SDRAM SO-DIMMs
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1200pin Unbuffered DDR2 SDRAM SO-DIMMs
IDD SPECIFICATIONS (TCASE: 0 to 95oC)
512MB, 64M x 64 SO-DIMM: HMP164S6EFR6C
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD6(L)
IDD7
C4
(DDR2 533@CL4)
340
440
40
108
140
100
48
180
620
620
640
40
20
920
Y5
(DDR2 667@CL5)
360
460
40
120
160
100
48
200
800
740
660
40
20
1040
S5/S6
(DDR2 800@CL5&6)
380
480
40
128
180
100
48
220
920
860
680
40
20
1160
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
mA
1
mA
1GB, 128M x 64 SO-DIMM: HMP112S6EFR6C
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P(F)
IDD3P(S)
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD6(L)
IDD7
C4
(DDR2 533@CL4)
480
580
80
216
280
200
96
360
760
760
780
80
40
1060
Y5
(DDR2 667@CL5)
520
620
80
240
320
200
96
400
960
900
820
80
40
1200
Notes:
1. IDD6 current values are guaranteed up to Tcase of 85°C max.
S5/S6
(DDR2 800@CL5&6)
560
660
80
256
360
200
96
440
1100
1040
860
80
40
1340
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
1
mA
1
mA
Rev. 0.3 / Dec. 2009
13
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