HY75N10T Datasheet, PDF (3/4 Pages) HY ELECTRONIC CORP. – 100V / 75A N-Channel Enhancement Mode MOSFET

HY75N10T
Typical Characteristics Curves ( T_C=25℃, unless otherwise noted)
200
18
V_GS=10V
160
16
6.0V
14
120
V_GS= 10V~ 7.0V
5.0V
12
80
10
40
4.5V
8
0
0
5
10
15
20
V_DS - Drain-to-Source Voltage (V)
6
0
20
40
60
80
100
I_D - Drain Current (A)
Fig.1 Output Characteristric
Fig.2 On-Resistance vs Drain Current
30
2.4
26
I_D =30A
V_GS =10 V
I_D =30A
2
22
1.6
18
1.2
14
10
0.8
6
4
5
6
7
8
9
10
V_GS - Gate-to-Source Voltage (V)
0.4
-50 -25
0 25 50 75 100 125 150 175
T_J - Junction Temperature (^oC)
Fig.3 On-Resistance vs Gate to Source Voltage
Fig.4 On-Resistance vs Junction Temperature
6000
5000
Ciss
4000
f = 1MHz
V_GS = 0V
12
V_DS=50V
10
I_D =30A
8
3000
6
2000
4
1000
Coss
Crss
0
0
10
20
30
40
V_DS - Drain-to-Source Voltage (V)
Fig.5 Capacitance Characteristic
REV.1, 8-May-2012
2
0
0 20 40 60 80 100 120 140 160
Q_g - Gate Charge (nC)
Fig.6 Gate Charge Characteristic
PAGE.3